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IPD200N15N3GATMA1
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.
Availability: In Stock
Package Type: TO-252-3
CAD Models: Footprint
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| Verification | Issues | Specs | Pricing |
Specifications for the IPD200N15N3GATMA1
| Part Name | IPD200N15N3GATMA1 |
| Manufacturer | Infineon Technologies |
| RoHS | True |
| Product Link | https://www.infineon.com/cms/en/product/power/mosfet/12v-300v-n-channel-power-mosfet/ipd200n15n3-g/ |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 50 A |
| Width | 9.45 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 150 V |
| Maximum Gate Threshold Voltage (V) | 4 (V) |
| Package Type | DPAK (TO-252) |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 2 (V) |
| Maximum Operating Temperature | +175 °C |
| Channel Type | N |
| Length | 10.36 (mm) |
| Typical Gate Charge Vgs | 23 nC @ 10 V |
| Pin Count | 3 |
| Mounting Type | Surface Mount |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 150 W |
| Series | OptiMOSâ„¢ 3 |
| Maximum Gate Source Voltage (V) | 20 V |
| Height | 4.57 (mm) |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage (V) | 1.2 (V) |
| Maximum Drain Source Resistance | 20 mΩ |
Inventory for the IPD200N15N3GATMA1 by Infineon from major distributors.
| Supplier | Quantity | Price | Purchase | |
|---|---|---|---|---|
|
★ Featured
|
32,626
|
|
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|
★ Featured
|
3,265
|
|
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|
★ Featured
|
20,000
|
350 x $0.86
|
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| Arrow Europe |
65,000
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2,500 x $1.00
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| Verical |
4,975
|
24 x $1.33
|
Visit Site |
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